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che1260-qag rohs compliant ref : dsche1260qag0200 - 19 jul 10 1/14 specificati ons subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 ums e1260 yyww 10-27ghz bidirectionnal detector gaas monolithic microwave ic in smd leadless packag e description the che1260-qag is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detector diodes and two reference diodes. it allows the measurement of transmitted and reflected power. it is designed for a wide range of applications where an accurate transmitted power control is required, typically commercial communication systems. the circuit is manufactured with a schottky diode mmic process, 1m gate length, via holes through the substrate and air bridges. it is supplied in leadless smd package. main features wide frequency range 10-27ghz bidirectionnal detection 30db dynamic range esd protected 16l-qfn3x3 smd package msl1 main characteristics tamb = +25c, vdc = +4.5v (on dc_i and dc_r) symbol parameter min typ max unit f frequency range 10 27 ghz il insertion loss 1 db dr dynamic range 15 db esd protection: electrostatic discharge sensitive d evice. observe handling precautions! vdet_i rf_in rf_out vref_i vdet_r vref_r dc_r dc_i vdet_i rf_in rf_out vref_i vdet_r vref_r dc_r dc_i vdet_i rf_in rf_out vref_i vdet_r vref_r dc_r dc_i vdet_i rf_in rf_out vref_i vdet_r vref_r dc_r dc_i 10ghz 12ghz 17ghz 22ghz 27ghz
che1260-qag 10-27ghz detector ref. : dsche1260qag0200 - 19 jul 10 2/14 specificat ions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 electrical characteristics tamb = +25c, vdc = +4.5v (on dc_i and dc_r) symbol parameter min typ max unit f frequency range 10 27 ghz il insertion loss 1 db cd coupler directivity 15 db dr dynamic range : 10 - 12ghz 12 - 24ghz 24 - 27ghz 15 8 15 db db db pd power detection : 10 - 17ghz 17 - 21ghz 21 - 24ghz 24 - 27ghz -1 -3 -6 -8 dbm dbm dbm dbm vdetect_i voltage detection from transmitted power vref_r C vdet_i from pd_min to pd_max 20 3500 mv vdetect_r voltage detection from reflected power vref_i C vdet_r from pd_min to pd_max 20 3500 mv rlin input return loss -12 -9 db rlout output return loss -12 -9 db vdc bias voltage 4.5 v idc bias current (on ports dc_i or dc_r) 25 33 45 m a these values are representative of on board measure ments as defined in notes, with 100k w resistor in parallel on pads vdet_i, vref_i, vdet_r and vref_r (see notes). absolute maximum ratings (1) tamb = +25c symbol parameter values unit vdc bias voltage (on ports dc_i and dc_r) 6 v top operating temperature range -40 to +85 c tstg storage temperature range -55 to +125 c p_max maximum power (for transmitted and/or reflected power) 30 dbm (1) operation of this device above anyone of these paramaters may cause permanent damage. thermal datas: pdc_max = 50a x 1v = 50w and prf_m ax = 20mw tj_max = 175c for maximum ratings
10-27ghz detector che1260-qag ref. : dsche1260qag0200 - 19 jul 10 3/14 specificat ions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical package sij parameters tamb = +25c, vdc = +4.5v (on dc_i and dc_r), 100k w resistor in parallel on pads vdet_i, vref_i, vdet_r and vref_r (see notes). freq (ghz) db(s11) ph(s11) () db(s12) ph(s12) () db(s2 1) ph(s21) () db(s22) ph(s22) () 2 -27.2 43 -0.2 -35 -0.2 -35 -26.8 34 3 -24.0 33 -0.2 -53 -0.2 -53 -23.8 21 4 -21.7 18 -0.3 -70 -0.3 -70 -21.3 5 5 -19.9 3 -0.3 -87 -0.3 -88 -19.6 -11 6 -18.4 -15 -0.4 -105 -0.4 -105 -18.2 -27 7 -17.3 -33 -0.4 -122 -0.4 -122 -16.9 -43 8 -16.1 -51 -0.5 -140 -0.5 -140 -15.8 -58 9 -15.2 -70 -0.5 -157 -0.5 -157 -14.9 -74 10 -14.5 -88 -0.6 -174 -0.6 -174 -14.1 -90 11 -13.7 -107 -0.7 168 -0.7 168 -13.3 -105 12 -13.0 -124 -0.7 151 -0.7 151 -12.7 -121 13 -12.5 -141 -0.8 134 -0.8 134 -12.3 -138 14 -12.3 -157 -0.8 117 -0.8 117 -12.3 -155 15 -12.6 -172 -0.8 100 -0.8 100 -12.7 -172 16 -13.3 172 -0.8 82 -0.8 82 -13.6 170 17 -14.6 157 -0.7 65 -0.7 65 -15.2 150 18 -17.5 142 -0.7 47 -0.7 47 -18.2 127 19 -22.5 131 -0.7 29 -0.7 29 -23.6 100 20 -34.9 161 -0.7 11 -0.7 11 -31.9 23 21 -24.9 -105 -0.7 -8 -0.7 -8 -25.1 -73 22 -18.8 -116 -0.8 -26 -0.8 -26 -19.6 -105 23 -15.9 -132 -0.9 -45 -0.9 -45 -17.3 -131 24 -15.1 -149 -1.0 -63 -1.0 -63 -16.2 -154 25 -14.6 -163 -1.1 -81 -1.1 -81 -15.9 -176 26 -15.3 -178 -1.2 -99 -1.2 -99 -15.9 160 27 -16.3 165 -1.2 -118 -1.2 -118 -16.2 136 28 -17.6 153 -1.3 -137 -1.3 -137 -17.0 110 29 -18.9 138 -1.4 -156 -1.4 -156 -17.1 83 30 -21.0 125 -1.5 -175 -1.4 -175 -17.9 53 31 -24.9 121 -1.5 165 -1.6 165 -18.7 15 32 -30.0 140 -1.6 145 -1.6 145 -19.7 -32 33 -23.0 -169 -1.7 125 -1.7 124 -18.1 -91 34 -16.4 -179 -1.9 103 -1.9 103 -14.4 -139 35 -12.2 163 -2.3 82 -2.3 82 -11.1 -174 36 -9.4 147 -2.8 61 -2.8 61 -8.1 159 37 -7.3 129 -3.4 41 -3.4 41 -6.5 135 38 -5.8 114 -3.9 23 -3.9 23 -5.5 117 39 -5.4 101 -4.2 7 -4.2 7 -5.3 102 40 -5.3 91 -4.0 -11 -4.0 -11 -5.5 91 41 -7.4 73 -4.5 -34 -4.4 -34 -7.2 71 42 -9.2 68 -4.3 -58 -4.4 -58 -9.8 69 43 -10.3 84 -4.7 -85 -4.7 -85 -11.6 93 44 -7.6 96 -5.7 -112 -5.7 -112 -7.3 105 45 -4.9 90 -7.1 -136 -7.0 -136 -4.4 97 46 -2.9 79 -8.8 -161 -8.7 -160 -2.6 84 47 -2.1 68 -11.0 179 -10.8 178 -1.5 71 48 -1.9 56 -12.7 163 -12.7 162 -0.9 56 49 -1.8 48 -14.4 142 -14.3 141 -0.9 41 50 -2.0 40 -16.8 123 -16.8 123 -1.5 28 refer to the definition of the sij reference plane s section below.
che1260-qag 10-27ghz detector ref. : dsche1260qag0200 - 19 jul 10 4/14 specificat ions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical measured performance tamb = +25c, vdc = +4.5v (on dc_i and dc_r), 100k w resistor in parallel on pads vdet_i, vref_i, vdet_r and vref_r (see notes). losses measurements in the package access plans (refer to the definition of the sij reference plan es section below) insertion losses versus frequency input and output return losses versus frequency rlin rlout
10-27ghz detector che1260-qag ref. : dsche1260qag0200 - 19 jul 10 5/14 specificat ions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 power measurements in the plan of the connectors using the proposed land pattern in paragraph "evalu ation mother board" incident power detection versus incident power @ di fferent frequencies (vdetect_i) reflected power detection versus incident power @ d ifferent frequencies (vdetect_r) 10ghz 12ghz 17ghz 22ghz 27ghz 10ghz 12ghz 17ghz 22ghz 27ghz 20 5 000 20 5 000
che1260-qag 10-27ghz detector ref. : dsche1260qag0200 - 19 jul 10 6/14 specificat ions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical measured performance: notes the che1260-qag is a bidirectionnal detector using a symmetrical bidirectionnal coupler. therefore the incident power detection versus incid ent power is identical to the reflective power detection versus reflected power. the reflective power detection versus incident powe r depends on both the coupler directivity and the reflective environment of the package. the following typical measured performances are obt ained for a packaged detector, assembled on a connectorized board.
10-27ghz detector che1260-qag ref. : dsche1260qag0200 - 19 jul 10 7/14 specificat ions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 incident and reflective power detection versus inci dent power @ 10ghz (vdetect_i & vdetect_r) incident and reflective power detection versus inci dent power @ 12ghz (vdetect_i & vdetect_r) 20 5 000 incident reflective 20 5 000 incident reflective
che1260-qag 10-27ghz detector ref. : dsche1260qag0200 - 19 jul 10 8/14 specificat ions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 incident and reflective power detection versus inci dent power @ 22ghz (vdetect_i & vdetect_r) incident and reflective power detection versus inci dent power @ 27ghz (vdetect_i & vdetect_r) 20 5 000 incident reflective incident reflective 20 5 000
10-27ghz detector che1260-qag ref. : dsche1260qag0200 - 19 jul 10 9/14 specificat ions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 incident and reflective power detection versus inci dent power and temperature @ 12ghz (vdetect_i & vdetect_r) incident and reflective power detection versus inci dent power and temperature @ 22ghz (vdetect_i & vdetect_r) incident reflective -40c +25c +85c -40c +25c +85c incident reflective -40c +25c +85c -40c +25c +85c 20 5 000 20 5 000
che1260-qag 10-27ghz detector ref. : dsche1260qag0200 - 19 jul 10 10/14 specifica tions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 package outline (1) : matt tin, lead free (green) 1- nc 9- gnd units mm 2- gnd 10- rf out from the standard jedec mo-220 3- rf in 11- gnd (veed) 4- gnd 12- nc 17- gnd 5- det_i 13- nc 6- dc_i 14- det_r 7- ref_i 15- dc_r 8- nc 16- ref_r (1) the package outline drawing included to this data-s heet is given for indication. refer to the application note an0017 available at http://www.ums-gaas.com for exact package dimensions. it is strongly recommended to ground all pins marke d gnd through the pcb board. ensure that the pcb board is designed to provide the best possible ground to the package. e1260
10-27ghz detector che1260-qag ref. : dsche1260qag0200 - 19 jul 10 11/14 specifica tions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 definition of the sij reference planes the reference planes used for sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). the input and output reference planes are located at 2.65mm offset (input wise and output wise respectively) from this axis. then, the given sij parameters incorporate the recommended land pattern of the evaluation motherboard . recommended package footprint refer to the application note an0017 available at http://www.ums-gaas.com for package foot print recommendations and exact packag e dimensions. smd mounting procedure the smd leadless package has been designed for high volume surface mount pcb assembly process. the dimensions and footprint requ ired for the pcb (motherboard) are given in the drawings above. for the mounting process standard techniques involv ing solder paste and a suitable reflow process can be used. for further details, se e application note an0017. recommended environmental management refer to the application note an0019 available at http://www.ums-gaas.com for environmental data on ums package products. recommended esd management refer to the application note an0020 available at http://www.ums-gaas.com for esd sensitivity and handling recommendations for the um s package products.
che1260-qag 10-27ghz detector ref. : dsche1260qag0200 - 19 jul 10 12/14 specifica tions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 notes vdet_i rf_in rf_out vref_i vdet_r vref_r dc_r dc_i vdet_i rf_in rf_out vref_i vdet_r vref_r dc_i 100k w ww w 100k w ww w 100k w ww w 100k w ww w vdet_i rf_in rf_out vref_i vdet_r vref_r dc_r dc_i vdet_i rf_in rf_out vref_i vdet_r vref_r dc_i 100k w ww w 100k w ww w 100k w ww w 100k w ww w recommended external resistors assembly 100k w resistors in parallel with vdet_i, vref_i, vdet_r and vref_r pads are recommended to provide the best behaviour in the whole operatin g temperature range. best accuracy is obtained when: vdetect_ i= vref_r- vdet_i vdetect_r= vref_i- vdet_r as the voltage detection is the difference between vref_x and vdet_x (x= i or r), the external resistor value should be identical on thes e ports. for information, a variation of 2% leads around 1mv variation of detected voltage. esd protections are implemented on vdet_i, vref_i, vdet_r and vref_r accesses. the dc connections (dc_r & dc_i) do not include any decoupling capacitor in package, therefore it is mandatory to provide a good externa l dc decoupling on the pc board, as close as possible to the package.
10-27ghz detector che1260-qag ref: dsche1260qag0200 - 19 jul 10 13/14 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 evaluation mother board compatible with the proposed footprint. based on typically ro4003 / 8mils or equivalent. using a microstrip to coplanar transition to acces s the package. recommended for the implementation of this product on a module board. decoupling capacitors of 10nf 10% are recommended for all dc accesses. (see application note an0017 for details). capacitor 10nf resistor 100kohms
che1260-qag 10-27ghz detector ref. : dsche1260qag0200 - 19 jul 10 14/14 specifica tions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 ordering information qfn 3x3 rohs compliant package: che1260-qag/xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.

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